SK hynix and ASML debut world's first High-NA EUV lithography system for DRAM production

The High Numerical Aperture (NA) Extreme Ultraviolet (EUV) system delivers a numerical aperture of 0.55, a 40 percent increase over the previous standard of 0.33. This improvement enables the lithography tool to achieve 8nm resolution, an enhancement that allows for the fabrication of transistors 1.7 times smaller than those possible…

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